For faster,smaller,and high performance integrated circuits the new concept of buried bump interconnect substrates is required. We have developed B2itTM (buried bump interconnection technology) for this technical trend. The fine phase of this interconnection technology carries out the build up of the fine wiring layer of Cu/BCB on all buried bump interconnection technology wiring boards for high-density and high performance. This paper reports the results that focus on the fine wiring layer formation process technology and the high frequency transmission characteristic of the fine phase as a result of a fine wiring formation process' adopting BCB as dielectric material and the sputter semi additives method. The limitation of the minimum pitch was 10µm (L/S=6 /4). Filled via process was possible for a 20µm via diameter. Electromagnetic simulation was performed to research the dependence of the signal transmission characteristic on the pitch of fine lines. When the pitch becomes small at 10µm or less,it turns out that transmission loss becomes large due to the influence of contiguity wiring. As high frequency correspondence aptitude,a result of the S parameter with micro strip line structure,it was –3dB in 16GHz. From this,as a design rule for fine wiring layers,a pitch of 15µm (L/S=7.5/ 7.5),and 20µm for filled via diameters are optimal designs. The fine wiring technology was developed and designed for a high density and high-speed substrate,utilizing this buried bump interconnection technology.
Author(s)
Satoru Kuramochi,Tomoko Maruyama,Miyuki Akazawa,Kouichi Nakayama,Atsushi Takano,Kazuo Umeda,Osamu Shimada,Yoshitaka Fukuoka